DMBT4403 discrete semiconductors r dc components co., ltd. technical specifications of pnp epitaxial planar transistor description designed for general purpose switching and amplifier applications. pinning 1 = base 2 = emitter 3 = collector .091(2.30) .067(1.70) sot-23 dimensions in inches and (millimeters) .063(1.60) .055(1.40) .108(0.65) .089(0.25) .045(1.15) .034(0.85) .118(3.00) .110(2.80) .020(0.50) .012(0.30) .0043(0.11) .0035(0.09) .004 (0.10) .051(1.30) .035(0.90) .026(0.65) .010(0.25) max .027(0.67) .013(0.32) 2 1 3 characteristic symbol rating unit collector-base voltage vcbo -40 v collector-emitter voltage vceo -40 v emitter-base voltage vebo -5 v collector current ic -600 ma total power dissipation pd 225 mw junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc) characteristic symbol min typ max unit test conditions collector-base breakdown volatge bvcbo -40 - - v ic=-100ma collector-emitter breakdown voltage bvceo -40 - - v ic=-1ma emitter-base breakdown volatge bvebo -5 - - v ie=-10ma collector cutoff current icex - - -100 na vce =-35v, veb=-0.4v collector-emitter saturation v oltage(1) vce(sat)1 - - -0.4 v ic=-150ma, ib= -15ma vce(sat)2 - - -0.75 v ic=-500ma, ib=-50ma base-emitter saturation voltage (1) vbe(sat)1 - - -0.95 v ic=-150ma, ib=-15ma vbe(sat)2 - - -1.3 v ic=-500ma, ib=-50ma hfe1 30 - - - ic=-0.1ma, vce=-1v hfe2 60 - - - ic=-1ma, vce=-1v dc current gain(1) hfe3 100 - - - ic=-10ma, vce=-1v hfe4 100 - 300 - ic=-150ma, vce=- 2v hfe5 20 - - - ic=-500ma, vce=-2v transition frequency ft 200 - - mhz ic=-20ma, vce =-10v, f=100mhz output capacitance cob - - 8.5 pf vcb =-10v, f=1mhz electrical characteristics (ratings at 25oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2%
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